一、引言 GaAs肖特基栅FET(MESFET)在微波下的低噪声系数已得到了证明,而且很快被用在微波通信和雷达的接收机中。但是,随着科学技术和现代化武器的发展,在某些国防及卫星等的应用中,必须考虑核辐射对GaAs MES FET的影响,考虑该种器件在辐射环境中的性能。为此,美国综合工艺研究所进行了专门的研究,探索了快中子和γ辐射对1μm栅 I. INTRODUCTION The low noise figure of microwave GaAs Schottky FETs (MESFETs) has been demonstrated and is rapidly being used in microwave communication and radar receivers. However, with the development of science and technology and modern weapons, the influence of nuclear radiation on the GaAs MES FET must be considered in some national defense and satellite applications, and the performance of such devices in the radiation environment must be considered. To this end, the United States Institute for Integrated Technology conducted a special study to explore the fast neutron and γ radiation on the 1μm gate