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采用反应直流磁控溅射法制备了掺钨氧化铟(In2O3:W,IWO)透明导电氧化物薄膜。薄膜中掺杂的钨离子与被替代的铟离子之间存在高价态差。与相同电阻率的ITO(In2O3:Sn)相比,IWO薄膜具有载流子浓度低、迁移率高和近红外区透射率高的特点。研究了氧分压、溅射电流等参数对IWO薄膜电学和光学性能的影响。制备的多晶IWO薄膜最佳电阻率为3.1×10-4Ω.cm,最高载流子迁移率为58 cm2 V-1 s-1,可见光范围平均透射率大于90%,近红外区(700～2500 nm)平均透射率约为85%。
Doping indium tin oxide (In2O3: W, IWO) transparent conductive oxide thin films were prepared by reactive DC magnetron sputtering. There is a high valence gap between the doped tungsten ions in the film and the substituted indium ions. Compared with ITO (In2O3: Sn) of the same resistivity, IWO film has the characteristics of low carrier concentration, high mobility and high transmittance in the near infrared region. The effects of oxygen partial pressure and sputtering current on the electrical and optical properties of IWO films were investigated. The prepared polycrystalline IWO films have the best resistivity of 3.1 × 10-4Ω.cm, the highest carrier mobility of 58 cm2 V-1 s-1, the average transmittance in the visible range of more than 90%, the near-infrared region of 700 ~ 2500 nm) The average transmission is about 85%.