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用纳米硅（ｎｃＳｉ∶Ｈ）薄膜制成了隧道二极管，并在其ＩＶ曲线上发现了不连续的量子化台阶．二极管的ＩＶ曲线可分成二部分：（１）０—７Ｖ，电流随外加电压增大而增大；（２）７—９Ｖ，电流随外加电压急剧增大并出现三个量子化台阶．量子化台阶的出现直接与纳米硅中的晶粒有关，根据ｎｃＳｉ∶Ｈ的独特结构，对载流子的传导通道进行了讨论；用通过ｎｃＳｉ∶Ｈ中量子点的共振隧穿对ＩＶ曲线进行了初步解释．
A tunnel diode was fabricated from a nanocrystalline silicon (nc-Si: H) thin film and a discontinuous quantization step was found on its I-V curve. Diode I V curve can be divided into two parts: (1) 0-7V, the current increases with the increase of applied voltage; (2) 7-9V, the current rapidly increases with the applied voltage and the emergence of three quantization steps. The appearance of the quantization step is directly related to the grains in the nano-silicon. According to the unique structure of nc-Si: H, the conduction channel of the carrier is discussed. The resonant tunneling through the quantum dots in nc-Si: H The I V curve was initially explained.