【摘 要】
：
在18GHz,AlGaAs/GaAs HBT已得到了显著的功率性能。共发射极HBT达到了48.5％的附加效率、6.2dB相关增益和0.17W的输出功率。共基极工作的HBT在18GHz下显示出更高的性能:功率水
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在18GHz,AlGaAs/GaAs HBT已得到了显著的功率性能。共发射极HBT达到了48.5％的附加效率、6.2dB相关增益和0.17W的输出功率。共基极工作的HBT在18GHz下显示出更高的性能:功率水平0.358W(3.58W/mm),增益11.4dB,附加效率43％;降低功率水平到0.174W(1.74W/mm),则可得到15.3dB相关功率增益以及40％效率。该性能可与MISFET、HEMT和PBT的报道结果相媲美。
At 18GHz, AlGaAs / GaAs HBTs have achieved significant power performance. The total emitter HBT achieves an additional efficiency of 48.5%, a correlation gain of 6.2 dB, and an output power of 0.17W. The HBT at base operation shows higher performance at 18 GHz: 0.358W (3.58W / mm) power, 11.4dB gain, 43% additional efficiency, and 0.174W (1.74W / mm) reduction in power level Get 15.3dB related power gain and 40% efficiency. This performance is comparable to the reported results for MISFET, HEMT and PBT.
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