论文部分内容阅读
氮化镓高电子迁移率晶体管(Ga N HEMT)器件具有高功率和功率密度、高导热率、高击穿场强、宽工作频带等特点,适合小型化、宽频带、大功率应用。基于Ga N功率器件的特点研制了P波段宽带小型化40 W发射模块。通过负载牵引技术对Ga N HEMT器件进行了大信号参数的提取,运用ADS软件进行了匹配电路的设计,对功率放大器的性能指标进行了优化,并基于LTC4440和n MOS器件设计了高压脉冲调制电路。研制结果表明,该模块在400 MHz工作带宽内(相对带宽100%)的输出功率为46.6 d Bm(45.7 W),功率增益为36.6 d B,功率附加效率(PAE)为40.4%,杂波抑制为65.7 d Bc,脉冲顶降为0.4 d B,脉冲上升时间为75 ns,脉冲下降时间为50 ns,模块尺寸为50 mm×40 mm×20 mm。
GaN high electron mobility transistor (Ga N HEMT) devices with high power and power density, high thermal conductivity, high breakdown strength, wide operating band, etc., suitable for small, wideband, high-power applications. Based on the characteristics of Ga N power devices, a P band broadband miniaturization 40 W transmitter module has been developed. The large-signal parameters of Ga N HEMT device were extracted by load-pull technology. The matching circuit was designed by using ADS software. The performance of the power amplifier was optimized. Based on the LTC4440 and n MOS devices, a high-voltage pulse modulation circuit . The results show that the module has an output power of 46.6 dBm (45.7 W), a power gain of 36.6 dB and a power added efficiency (PAE) of 40.4% over a 400 MHz bandwidth (relative bandwidth of 100%). The clutter suppression Is 65.7 d Bc, the pulse top is 0.4 d B, the pulse rise time is 75 ns, the pulse fall time is 50 ns and the module size is 50 mm × 40 mm × 20 mm.