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由于InP具有高的峰谷比,高的电子漂移速度和快的谷间散射.使其成为微波和光电器件方面有前途的新材料. 本工作企图采用 In/PCl_3/H_2体系,汽相生长满足器件要求的 InP外延材料.实验方法如下: 采用与GaAs汽相外延相似的装置:主路接PCl_3料瓶,旁路接掺杂“S”料瓶和供汽
Due to its high peak-to-valley ratio, high electron drift velocity and fast intergranular scattering, InP has become a promising new material in microwave and optoelectronic devices.In this work, In / PCl_3 / H_2 system is attempted to meet the requirements of vapor phase growth InP epitaxial material required by the device. The experimental method is as follows: with GaAs vapor phase epitaxy similar device: the main access PCl_3 bottle, bypass connected doped “S” bottle and steam