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利用碳热还原反应气相沉积法制备了铟掺杂氧化锌-氧化硅纳米电缆芯-壳异质结构.X射线衍射(XRD)、透射电子显微镜(TEM)及X射线能谱(EDS)研究表明,纳米电缆内芯为结晶完好的单晶纤锌矿结构,外壳包覆一层氧化硅非晶层.纳米电缆直径为30-60nm,长径比大于100.掺杂纳米异质结构的生长机理与传统的金属晶种辅助气-液-固(VLS)机理有所不同.这种掺杂纳米异质结构有望作为理想的结构单元应用于纳米器件领域.
The core-shell heterostructure of indium-doped zinc oxide-silicon oxide nanocables was prepared by carbothermal reduction vapor deposition.The results of X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray energy dispersive spectroscopy (EDS) , The inner core of the nano-cable is a crystal well-structured wurtzite structure, and the shell is covered with a non-crystalline silicon oxide layer. The diameter of the nano-cable is 30-60nm and the aspect ratio is greater than 100. Growth mechanism of the doped nano-structure Which is different from the conventional metal seed assisted gas-liquid-solid (VLS) mechanism. This doped nano-heterostructure is expected to be an ideal structural unit in the field of nano-devices.