论文部分内容阅读
This paper reports that the intrinsic microcrystalline silicon (μc-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200 C with the aim to increase the deposition rate.An increase of the deposition rate to 0.88 nm/s is obtained by using a plasma excitation frequency of 75 MHz.This increase is obtained by the combination of a higher deposition pressure,an increased silane concentration,and higher discharge powers.In addition,the transient behaviour,which can decrease the film crystallinity,could be prevented by filling the background gas with H 2 prior to plasma ignition,and selecting proper discharging time after silane flow injection.Material prepared under these conditions at a deposition rate of 0.78 nm/s maintains higher crystallinity and fine electronic properties.By H-plasma treatment before i-layer deposition,single junction μc-Si:H solar cells with 5.5% efficiency are fabricated.
This paper reports that the intrinsic microcrystalline silicon (μc-Si: H) films are prepared with plasma enhanced chemical vapor deposition from silane / hydrogen mixtures at 200 C with the aim to increase the deposition rate. An increase of the deposition rate to 0.88 nm / s is obtained by using a plasma excitation frequency of 75 MHz. His increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behavior, which can decrease the film crystallinity , could be prevented by filling the background gas with H 2 prior to plasma ignition, and selecting proper discharging time after silane flow injection. Prepared under these conditions at a deposition rate of 0.78 nm / s higher higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction μc-Si: H solar cells with 5.5% efficiency are fabricated.