采用纯Al片表面浸Zn后再电镀厚Cu层的方法制备Cu/Al层状复合材料。在473~673 K温度范围内对该复合材料进行退火,研究退火过程中Cu/Al界面扩散与反应、界面金属间化合物(IMCs)层的长大动力学以及Cu/Al层状复合材料电阻率。结果表明,经过473 K、360 h的退火处理,未观察到Cu-Al IMCs层,显示Zn中间层能有效抑制Cu/Al界面扩散。可是,当复合材料经573 K及以上温度退火时,Zn层中的Zn原子主要向Cu中扩散,从Al侧到Cu侧形成CuAl_2/CuAl/Cu_9Al_4三层结构的反应产物。IMC层遵循扩散控制的生长动力学,Cu/Al复合材料的电阻率随退火温度及时间的增加而增大。 The Cu / Al layered composite was prepared by electroplating a thick Cu layer on the surface of pure Al sheet. The composite was annealed in the temperature range of 473 ~ 673 K. The diffusion kinetics of Cu / Al interface, the growth kinetics of intermetallic intermetallic compounds (IMCs) and the resistivity of Cu / Al layered composites . The results show that after annealing at 473 K and 360 h, no Cu-Al IMCs layer is observed, indicating that Zn intermediate layer can effectively inhibit Cu / Al interface diffusion. However, when the composite was annealed at 573 K and above, the Zn atoms in the Zn layer mainly diffused into Cu, and the CuAl_2 / CuAl / Cu_9Al_4 three-layer structure reaction products formed from the Al side to the Cu side. The IMC layer follows diffusion-controlled growth kinetics and the resistivity of Cu / Al composites increases with annealing temperature and time.