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在 MBE和 MOCVD两种方法制备的 n- Ga N材料上制作了 Au- Ga N肖特基结 ,测定了肖特基结的室温 I- V特性 .分析表明 :Ga N材料的载流子浓度对肖特基结的特性有很大的影响
Au-Ga N Schottky junctions were fabricated on n-Ga N materials prepared by both MBE and MOCVD methods, and the I-V characteristics at room temperature of the Schottky junction were measured. The results show that the carrier concentration Schottky junction characteristics have a great impact