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采用新加坡半导体制备有限公司的0.35um EEPROM双栅标准CMOS工艺设计和制备了U型Si-LED发光器件。器件结构采用P+-N+-P+-P+-P+-N+-P+-P+-P+-N+-P+叉指结构形成U型器件,外部的两个P+区为保护环,在相邻的内部两个P+区之间使用多晶硅作为栅极来调控LED的正偏发光。使用奥林巴斯IC显示镜测得了硅LED实际器件的显微图形,并对器件进行了电学的正反向I-V特性测量。器件在室温下正向偏置,在100～140mA电流下对器件进行了光功率的检测,发光峰值在1089nm处。结果表明,器件发光功率随着栅控电压偏置电流的增加而增加。
U-Si-LED light-emitting devices were designed and fabricated by the 0.35um EEPROM double-gate standard CMOS process of Singapore Semiconductor Manufacturing Co., Ltd. The structure of the device is a U-shaped device with an interdigitated structure of P + -N + -P + -P + -P + -N + -P + -P + -P + -N + -P +. Two external P + regions are guard rings, and two adjacent P + Polycrystalline silicon as the gate between the region to regulate the LED forward bias. Olympus IC display mirror was used to measure the actual LED micrographs of silicon devices, and the device was electrically positive and negative I-V characteristics of the measurement. The device is forward biased at room temperature and the optical power of the device is measured at a current of 100 to 140 mA with a peak emission at 1089 nm. The results show that the device luminous power increases with the gate bias voltage.