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为了解决如高温200℃等恶劣环境下的压力测量问题,基于微机电系统(MEMS)和高能氧离子注入(SIMOX)技术,研制了一种量程为0～120kPa的压阻式压力传感器。该传感器芯片由硅基底、薄层二氧化硅、惠斯登电桥结构的硼离子注入层、氮化硅应力匹配层、钛-铂-金梁式引线层和由湿法刻蚀形成的空腔组成。在氧剂量1.4×1018/cm2和注入能量200keV条件下,由高能氧离子注入技术形成厚度为367nm的埋层二氧化硅层,从而将上部测量电路层和硅基底隔离开,解决了漏电流问题,使得传感器芯片可以在高温200 ℃以上的环境下使用。为了提高传感器在宽温度范围内的稳定性,对温度补偿工艺进行了研究,补偿后的传感器灵敏度温度系数和零位温度系数很容易控制在1×10-4/℃.FS。实验标定结果表明:在200 ℃下,研发的耐高温压力传感器具有很好的工作性能,其线性度误差达0.12%FS、重复性误差为0.1%FS、迟滞误差为0.12%FS,精度达0.197%FS,满足油井、风洞、汽车和石化工业等现代工业的应用需求。
In order to solve the problem of pressure measurement in harsh environments such as high temperature 200 ℃, a piezoresistive pressure sensor with a measuring range of 0 ~ 120kPa was developed based on micro-electromechanical system (MEMS) and high-energy oxygen ion implantation (SIMOX) technology. The sensor chip consists of a silicon substrate, a thin layer of silicon dioxide, a boron ion implantation layer of a Wheatstone bridge structure, a silicon nitride stress matching layer, a titanium-platinum-gold beam lead layer, and a space formed by wet etching Cavity composition. Under the condition of an oxygen dose of 1.4 × 10 18 / cm 2 and an implantation energy of 200 keV, a buried silicon dioxide layer with a thickness of 367 nm is formed by a high-energy oxygen ion implantation technique to isolate the upper measurement circuit layer from the silicon substrate and solve the leakage current problem , Making the sensor chip can be used in high temperature above 200 ℃ environment. In order to improve the stability of the sensor in a wide temperature range, the temperature compensation process was studied. The compensated sensor sensitivity temperature coefficient and zero temperature coefficient can be easily controlled at 1 × 10-4 / ℃ .FS. Experimental calibration results show that the developed high temperature pressure sensor has a good working performance at 200 ℃ with linearity error of 0.12% FS, repeatability error of 0.1% FS, hysteresis error of 0.12% FS and accuracy of 0.197 % FS, to meet the oil wells, wind tunnels, automotive and petrochemical industries and other modern industrial applications.