论文部分内容阅读
本文介绍一种由力敏电阻全桥和温度补偿的放大器电路构成的集成压力传感器。通过理论分析得到了(100)矩形硅膜的尺寸以及力敏电阻位置和尺寸的最佳化设计。通过对全电路温度系数的分析计算,找到了最佳的工作条件。该设计已由双极集成电路工艺和各向异性化学腐蚀工艺实现,制成了灵敏度达到1000μV/mmHg的集成压力传感器,并已用于生理压力的实际测试。
This article presents an integrated pressure sensor consisting of a force-sensitive full-bridge and temperature-compensated amplifier circuit. Through the theoretical analysis, the size of the (100) rectangular silicon film and the optimum design of the position and size of the force-sensitive resistor are obtained. Through the analysis and calculation of the temperature coefficient of the whole circuit, found the best working condition. This design has been implemented with bipolar integrated circuit technology and an anisotropic chemical etching process to produce an integrated pressure sensor with a sensitivity of 1000 μV / mmHg and has been used for practical testing of physiological stress.