氮的掺入能够改善 a-Si∶H 的光电导性。用 ESR 方法难以分析其原因。吸收系数的弱吸收段却能显示出氮造成 a-Si∶H 缺陷态密度的变小。当掺氮量 x(?)0.01时,a-Si_(1-x)N_x 之ημT 值呈最大,在 E_(?)下1.2eV 处缺陷态密度最低,约3.3×10~(15)/cm~3。过量地掺氮则导致缺陷态密度增加,光电导降低。 The incorporation of nitrogen can improve the photoconductivity of a-Si: H. ESR method is difficult to analyze the reason. Absorption coefficient of the weak absorption section can show the nitrogen caused a-Si: H defect state density becomes smaller. The ημT value of a-Si_ (1-x) N_x is the largest when the nitrogen content is 0.01 (x), and the defect density is the lowest at 1.2eV at E_ (?), About 3.3 × 10 ~ ~ 3. Excessive nitrogen incorporation results in an increase in defect density and a decrease in photoconductivity.