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在低温5K下,采用光致发光光谱及外加偏压调谐量子点电荷组态研究了InAs单量子点的精细结构和对应发光光谱的偏振性、不同带电荷激子的圆偏振特性.得出如下结果:1)指认InAs单量子点中不同荷电激子的发光光谱和对应的激子本征态的偏振特性;2)外加偏压可以调谐量子点的荷电激子的发光光谱;3)伴随着电子、空穴的能量弛豫,电子的自旋弛豫时间远大于空穴的自旋弛豫时间.
The photoluminescence spectra and the bias voltage were used to tune the quantum dot charge configuration at 5K at low temperature to study the fine structure of the single InAs quantum dots and the polarization of corresponding luminescence spectra and the circular polarization of different charged excitons. Results: 1) The luminescence spectra of different charged excitons and the corresponding exciton eigenstates in the InAs single quantum dots were identified. 2) The bias voltage was used to tune the luminescence spectra of charged excitons in quantum dots. 3) With the energy relaxation of electrons and holes, the spin relaxation time of electrons is much larger than the spin relaxation time of holes.