日本电子技术综合研究所利用二氧化碳激光成功制成β型超细碳化硅,粒径为0.1～0.01微米。由于采用激光为热源。因而不必担心自然源混入杂质,故能够制成纯度极高的碳化硅。超细碳化硅制造是在300托减压真空容器中用氩气将稀释至2％左右的硅烷和20％乙烯气体导入,两者在极小的空间里混合,当照射激光,即生成β型超细碳化硅。生成 Japan Institute of Electronic Technology, the use of carbon dioxide laser successfully made β-type ultrafine silicon carbide, particle size of 0.1 to 0.01 microns. As a result of the laser as a heat source. So do not have to worry about mixing natural sources of impurities, it can be made of highly pure silicon carbide. The ultrafine silicon carbide is produced by introducing silane and 20% ethylene gas diluted to about 2% with argon in a 300 Torr vacuum-pressure vessel, and both are mixed in a very small space. When the laser is irradiated, a β-type Superfine silicon carbide. generate