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利用磁控反应溅射技术制备了氮化钽薄膜，利用ＴＥＭ、ＸＲＤ技术研究了薄膜的微观结构。研究结果表明：薄膜中多相共存；薄膜晶粒细小（１６ｎｍ左右）；同时还发现，在一定工作压力下，随着氮分压的提高，氮化物晶粒形成的取向改变，即平行于基体表面生长的晶面会有改变。一定工作压力下，制备的氮化钽薄膜硬度高达４０００ｋｇ／ｍｍ２以上。本文探讨了氮化钽薄膜高硬度的原因，并且讨论了随氮分压的提高薄膜织构变化的原因。
The tantalum nitride thin films were prepared by magnetron reactive sputtering. The microstructures of the thin films were investigated by TEM and XRD. The results show that: the films coexist in multi-phase; the thin film is thin (about 16nm); at the same time, it is also found that with the increase of partial pressure of nitrogen, the alignment of nitride grains changes under certain working pressure, Surface growth of the crystal face will change. Under certain working pressure, the prepared tantalum nitride film has a hardness of more than 4000kg / mm2. This paper explores the reasons for the high hardness of tantalum nitride films and discusses the reasons for the increase in the texture of the films with the partial pressure of nitrogen.