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报道了基于 SDB技术的新结构穿通 ( PT)型 IGBT器件的研制 .运用 SDB技术 ,实现了PT型 IGBT器件的 N+ 缓冲层的优化设计 ,也形成了 IGBT器件的正斜角终端结构 .研制出IGBT器件有较好的电击穿特性和关断特性 .
This paper reports the development of a new structure through-type (PT) IGBT device based on SDB technology.Using SDB technology, the optimized design of N + buffer layer of PT IGBT device is achieved, and the positive terminal structure of IGBT device is also formed. IGBT devices have better electrical breakdown characteristics and shutdown characteristics.