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在原有设计以及工艺的基础上,采用了器件表面等平面化处理及侧壁钝化工艺,器件工作电压大幅度提高,截止漏电流降低约两个数量级,跨导提高1.5mS/mm。2GHz下测试,微波功率附加效率提高10%左右,增益平均提高了2dB,在VDS=60V的条件下单管功率输出达到了86.5W。经过内匹配和功率合成研制成大功率的SiC脉冲功率管的综合性能较好,在250W的输出功率下,器件仍然保持高达10.5dB的高增益,功率附加效率30%。台阶仪和扫描电镜观测表明,台阶高度已经大大降低,侧壁得到了钝化,尖锐突起和凹坑都已经变得平缓。
On the basis of the original design and process, planarization of the device surface and passivation of the sidewall are adopted. The working voltage of the device is greatly increased, the cut-off leakage current is reduced by about two orders of magnitude, and the transconductance is increased by 1.5mS / mm. 2GHz test, the additional power of microwave power increased by about 10%, the average gain increased by 2dB, under the conditions of VDS = 60V single-tube power output reached 86.5W. After the internal matching and power synthesis developed into high-power SiC pulsed power tube overall performance is good, the output power of 250W, the device still retains up to 10.5dB high gain, power added efficiency of 30%. Stages and scanning electron microscopy observations show that the step height has been greatly reduced, the sidewalls have been passivated, and sharp protrusions and pits have flattened.