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比较了阳极氧化和Photo-CVD氧化两种钝化方式制备InSb探测器的性能,结果表明前者反偏漏电流小,击穿电压是后者的5倍,背景光电流和零偏阻抗基本相同。C-V测试结果:前者固定表面电荷密度为2×1011cm-2,后者为1.5×1011cm-2。两种氧化方法制备的器件经过高温高湿老化试验后,在反偏1 V时,阳极氧化器件漏电比变化率只有Photo-CVD氧化器件的50%,二者背景光电流均有增加,可能与器件光敏面扩大有关。阳极氧化钝化方法,工艺过程易于控制,钝化效果一致性较好,器件的界面状态更加稳定。
The performance of InSb detector fabricated by two passivation methods, anodic oxidation and Photo-CVD oxidation, was compared. The results show that the former has a small reverse-leakage current and a breakdown voltage of 5 times higher than that of the latter. The background current and the zero-bias impedance are basically the same. C-V test results: the former fixed surface charge density of 2 × 1011cm-2, the latter is 1.5 × 1011cm-2. After aging at high temperature and high humidity for two kinds of devices, the rate of change of the leakage ratio of the anodic oxidation device is only 50% of that of the Photo-CVD oxidation device at the reverse bias of 1 V, both of which have the potential of Device photosensitive surface expansion related. Anodic oxidation passivation method, the process is easy to control, passivation effect is better, the interface state of the device is more stable.