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为了探究缺陷对CdS纳米带性能产生的影响,本文通过简单、易行的化学气相沉积法(CVD)在硅基底上制备了CdS纳米带,将不同剂量的S离子注入到CdS纳米带中,并利用扫描电子显微镜(SEM)、X射线衍射(XRD)、光致发光(PL)、拉曼光谱(Raman)等分析样品的晶体结构,进一步通过光电性能的测试,研究S离子注入引入的缺陷对CdS纳米带性能产生的影响.结果表明,S离子注入引入的缺陷使CdS纳米带晶体质量发生变化,导致S离子注入后CdS纳米带的激子发光峰减弱,缺陷发光峰增强,并且它们之间的强度比随着注入剂量的改变可以进行调节.最后,通过对单根CdS纳米带场效应晶体管的转移特性曲线进行分析,证明了S离子注入引入的缺陷对CdS纳米带电学性能有较大影响,并进一步分析讨论了其对电学性能影响的机理.
In order to investigate the effect of defects on the properties of CdS nanoribbons, CdS nanoribbons were prepared on silicon substrates by simple and easy chemical vapor deposition (CVD), and different doses of S ions were implanted into CdS nanoribbons The crystal structure of the samples was analyzed by SEM, XRD, PL and Raman, and then the defect pairs introduced by S ion implantation were further studied through the photoelectric property test CdS nanoribbons.The results show that the defects introduced by S ion implantation change the crystal quality of the CdS nanoribbons and lead to the decrease of the exciton luminescence peak and the increase of the defect luminescence peak of the CdS nanoribbons after the S ions are implanted, Intensity ratio can be adjusted with the change of implantation dose.Finally, the analysis of the transfer characteristic curve of a single CdS nanoribd field-effect transistor shows that the defects introduced by S-ion implantation have a great influence on the electrical properties of CdS nanoribbons , And further analyzed and discussed the mechanism of its influence on electrical properties.