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The paper reports the effects of nitrogen content on the temperature dependence of photoconductivity σρ(T) and interface states NS in a-Si:H/ a-SiNx:H super-lattices by means of electroabsorption (EA) photothermal deflection spectroscopy (PDS). A critical value of nitrogen content for Ns and for intensity of N-H bond was found to be 0.6. The computer fitting of σρ(T) to determine the interface states was carried out which vas consistent with the results by PDS. A model of charged nitrongen dangling bond to illustrate the above results is discussed here.
The paper reports the effects of nitrogen content on the temperature dependence of photoconductivity σρ (T) and interface states NS in a-Si: H / a-SiNx: H super-lattices by means of electroabsorption (EA) photothermal deflection spectroscopy . A critical value of nitrogen content for Ns and for intensity of NH bond was found to be 0.6. The computer fitting of σρ (T) to determine the interface states was carried out which vas consistent with the results by PDS. A model of charged nitrongen dangling bond to illustrate the above results is discussed here.