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室温下利用直流磁控溅射法在有ZnO缓冲层的柔性衬底PET上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO∶Zr)透明导电薄膜,研究了厚度对ZnO∶Zr薄膜结构及光电性能的影响。结果表明,ZnO∶Zr薄膜为六方纤锌矿结构的多晶薄膜。实验获得ZnO∶Zr薄膜的最小电阻率为2.4×10-3Ω.cm,其霍尔迁移率为18.9 cm2.V-1.s-1,载流子浓度为2.3×1020cm-3。实验制备的ZnO∶Zr薄膜具有良好的附着性能,其可见光平均透过率超过92%。
Zinc oxide (ZnO: Zr) -doped ZIR-transparent conductive thin films with high visible light transmittance and low resistivity were prepared by DC magnetron sputtering on PET with ZnO buffer layer at room temperature. Effect of ZnO: Zr Film Structure and Photoelectric Properties. The results show that the ZnO: Zr films are polycrystalline films with hexagonal wurtzite structure. The minimum resistivity of ZnO: Zr thin film obtained experimentally is 2.4 × 10-3Ω.cm, the Hall mobility is 18.9 cm2.V-1.s-1, and the carrier concentration is 2.3 × 1020cm-3. The experimentally prepared ZnO: Zr films have good adhesion properties with an average visible light transmission of more than 92%.