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设计并研制了共振隧穿二极管(RTD)与异质结双极晶体管(HBT)单片集成负阻逻辑单元。详细介绍了逻辑单元的材料结构及工艺流程的设计过程,得到了较好的负阻特性,其开启电压1V左右,峰谷比大于2∶1。同时建立了负阻逻辑单元的模型,通过Pspice模拟结果表明与实际逻辑单元特性吻合良好。
A monolithic negative resistance logic cell with resonant tunneling diode (RTD) and heterojunction bipolar transistor (HBT) is designed and fabricated. The material structure of the logic cell and the design process of the process are introduced in detail, and the negative resistance characteristic is obtained. The turn-on voltage is about 1V and the ratio of the peak to the valley is greater than 2: 1. At the same time, a model of negative resistance logic cell is established. The result of Pspice simulation shows that it is in good agreement with the actual logic cell characteristics.