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报道了采用质子注入制作平面掩埋条形高频DFB激光器。质子注入提高了限制层对电流的限制作用 ,并减小了限制层的寄生电容 ;DFB激光器的斜率效率由注入前的 0 .147mW /mA提高到 0 .2 16mW /mA ;电容测试结果表明 :质子注入使 pnpn结构的势垒电容明显减小 ,激光器的寄生电容由注入前的约 10 0 pF降至注入后的 6 pF ;激光器的 3dB调制带宽由注入前的 50 0MHz提高到 5.6 6GHz。高温老化筛选结果表明 ,质子注入对激光器的可靠性基本没有影响。
Reported the use of proton implantation plane buried strip high frequency DFB laser. The proton injection increases the confinement current limit and decreases the parasitic capacitance of the confinement layer. The slope efficiency of the DFB laser increases from 0.147 mW / mA before injection to 0.226 mW / mA. The capacitance test results show that: The proton injection significantly reduced the barrier capacitance of the pnpn structure. The parasitic capacitance of the laser decreased from about 10 0 pF before injection to 6 pF after injection. The 3dB modulation bandwidth of the laser increased from 50 0 MHz to 5.6 6 GHz before injection. High temperature aging screening results show that the proton injection has no effect on the reliability of the laser.