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A 4-interleaving cell of 2-dual interlocked cells(DICE) is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technology.The technique involves the 4-interleaving of dual DICE cells at a layout level to meet the required spacing between sensitive nodes in an area-efficient manner. Radiation experiments using a 65 nm CMOS test chip demonstrate that the LETth of our 4-interleaving cell of dual DICE encounters are almost 4 larger and the SEU cross section per bit for our proposed dual DICE design is almost two orders of magnitude less compared to the reference traditional DICE cell.
A 4 -interleaving cell of 2-dual interlocked cells (DICE) is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technology.The technique involves the 4-interleaving of dual DICE cells at a layout level to meet the required spacing between sensitive nodes in an area-efficient manner. Radiation experiments using a 65 nm CMOS test chip demonstrate that the LETth of our 4-interleaving cells of dual DICE encounters are almost 4 larger and the SEU cross section per bit for our proposed dual DICE design is almost two orders of magnitude less than to reference traditional DICE cell.