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针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点,对常规单沟道HEMT的小信号物理模型进行了修正,提出了一种新的用于复合沟道HEMT的小信号物理模型,用商用器件模拟软件ISE(integratedsystemsengineering)对其进行了仿真验证,对比了实测和仿真的I-V特性及转移特性曲线,重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势,研究结果表明,由于在沟道中存在量子效应,在栅下靠源端低电场区域,电流主要分布在InGaAs沟道,而在靠漏端高电场区域,电流主要分布在InP沟道,电流在InGaAs与InP沟道中的分配比例随着栅压的变化而变化,从而验证了新模型的正确性.
Aiming at the characteristics of indium phosphide (InP) compound channel high electron mobility transistor (HEMT), the small signal physical model of conventional single channel HEMT is modified, and a new small channel HEMT The signal physics model is simulated with commercial device simulation software ISE (integrated system system), and the measured and simulated IV characteristics and transfer characteristic curves are compared. The electric field after considering the quantum effect in the double channel of InGaAs / InP is mainly studied. The results show that due to the quantum effect in the channel, the current is mainly distributed in the InGaAs channel under the gate low-field region near the source. However, in the high-field region near the drain , The current is mainly distributed in the InP channel, and the distribution ratio of the current in the InGaAs and InP channels changes with the gate voltage, which verifies the correctness of the new model.