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采用“磨角—干涉仪法”对热氧化硅的表面进行了显微观测,发现在si—sio_2界面附近硅一侧的内表面存在着氧的扩散层,厚度在1,000—2,000埃之间。对于影响表面薄层的工艺因素作了实验性的检测。文中附有实验照片。
A microscopic observation of the surface of the thermal silica was conducted using a “goniometer-interferometer method”. It was found that an oxygen diffusion layer was present on the inner surface of the silicon side near the si-sio 2 interface and had a thickness of 1,000 to 2,000 angstroms. For the impact of the surface of the thin layer of the process factors made an experimental test. Text attached with experimental photos.