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针对MPCVD金刚石膜K-Ka波段(18～40 GHz)微波电子器件领域的应用需求,以及探索金刚石膜介电性能与品质之间的关系的需要,制备了5个金刚石膜样品,并建立了一套K波段分体圆柱谐振腔微波介电性能测试装置。使用Raman光谱表征金刚石膜质量,采用K波段分体圆柱谐振腔测量金刚石膜的介电性能,并与Ka波段的结果进行比较。结果表明,不同品质的样品介电损耗在3.8×10~(-5)～76.8×10~(-5)范围内,且介电损耗与Raman半峰宽密切相关。同时,高品质金刚石膜K波段介电损耗高于Ka波段,而低品质的则呈现相反的结果。这是由于高品质金刚石膜介电损耗主要由导电性引起,而低品质金刚石膜内较高的缺陷密度导致单声子声学振动吸收和瑞利散射较大。
In order to meet the needs of MPCVD diamond film K-Ka band (18-40 GHz) microwave electronic devices and explore the relationship between dielectric properties and quality of diamond films, five diamond film samples were prepared and a Set of K-band split cylindrical resonator microwave dielectric properties of test equipment. The Raman spectra were used to characterize the diamond film quality. The dielectric properties of the diamond films were measured using a K-band split cylindrical resonator and compared with the Ka-band results. The results show that the dielectric loss of different quality samples is in the range of 3.8 × 10 ~ (-5) ~ 76.8 × 10 ~ (-5), and the dielectric loss is closely related to the Raman half - width. At the same time, K-band dielectric loss of high-quality diamond films is higher than that of Ka-band, while low quality results in the opposite. This is due to the fact that the dielectric loss of high-quality diamond films is mainly caused by the conductivity, while the higher defect density in the low-quality diamond films leads to greater acoustic absorption and Rayleigh scattering of mono-phonons.