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本文利用X射线双晶衍射和电子探针显微分析方法,研究了MBE In_xGa_(1-x)As/GaAs(001)系统的晶格失配与In含量x值的关系.在外延层厚度t_(?)～2μm的情况下,获得范性应变临界组份x_c=0.114.当xx_c时,外延层出现范性形变.
In this paper, the relationship between lattice mismatch and In content x in MBE In_xGa_ (1-x) As / GaAs (001) system was investigated by X-ray double crystal diffraction and electron probe microanalysis. (?) ~ 2μm, the critical strain component x_c = 0.114 is obtained. When x x_c, the epitaxial layer The emergence of a paradoxical deformation.