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用Sb~+离子注入制备了p型Pb_(1-x) Hg_x Te p-n结光伏探测器。在295K时,用布里奇曼法生长的Pb_(0.97)Hg_(0.03)Te晶体的比电阻为0.01欧·厘米。研究了在77K和295K时的电流-电压特性和光谱响应。在77K时,表面为7.8×10~(-3)厘米~2的二极管的零偏压电阻面积乘积为228欧·厘米~2。在295K时,峰值探测度是在3.2微米处,截止波长在～3.9微米。在77K,视场为30°,背景为295K时,出现在4.95微米处的峰值探测度为1.14×10~(11)厘米赫~(1/2)瓦~(-1)。峰值量子效率约为30％,截止波长为～5.4微米。
P-type Pb_ (1-x) Hg_x Te p-n junction photovoltaic detector was fabricated by Sb ~ + ion implantation. The specific resistance of Pb_ (0.97) Hg_ (0.03) Te crystal grown by Bridgman method was 0.01 ohm · cm at 295K. The current-voltage characteristics and the spectral response at 77K and 295K were investigated. At 77K, the area of the zero bias resistor of a diode with a surface of 7.8 × 10 ~ (-3) cm ~ 2 is 228 Ω · cm ~ 2. At 295K, the peak detection is at 3.2 microns and the cut-off wavelength is ~ 3.9 microns. At 77K, with a field of view of 30 ° and a background of 295K, the peak detection at 4.95 μm was 1.14 × 10 ~ (11) cm ~ (1/2) W ~ (-1). The peak quantum efficiency is about 30% and the cut-off wavelength is ~ 5.4 microns.