据日本《Semiconductor World》1993年第4期报道,美国德克萨斯州的奥斯汀MCC和圣地亚国立研究所(新墨西哥州的阿尔伯克基)已共同开发成高温超导(HTS)器件和半导体CMOS相结合的技术。研究人员使用称作超导流晶体管(SFET),像存储器那样进行信息放大和读出,并已改进市售的LSI。这种实验器件已使存储器的读出时间从15ns缩短到6ns。这种SFET,由于半导体部分所需的功率很小,耗散功率约可降低两个数量级。 According to Japan’s “Semiconductor World” No. 4, 1993, the Austin MCC and San Diego State Institute (Albuquerque, NM) of Texas, USA, have jointly developed high-temperature superconducting (HTS) devices and semiconductor CMOS The combination of technology. Researchers use what are known as superconducting flow transistors (SFETs) to amplify and read information like memories and have improved commercially available LSIs. This experimental device has reduced the memory read-out time from 15ns to 6ns. This SFET, due to the small power required for the semiconductor part, dissipates about two orders of magnitude lower power.