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应变锗材料具有准直接带特性,而且与标准硅工艺兼容,成为实现硅基发光器件重要的候选材料之一.本文基于van de Walle形变势理论,计算了应变情况下半导体Ge材料的能带结构以及载流子在导带中的分布;通过分析载流子直接带和间接带问的辐射复合以及俄歇复合、位错等引起的非辐射复合的竞争,计算了N型掺杂张应变Ge材料直接带跃迁的内量子效率和光增益等发光性质.结果表明,张应变可有效增强Ge材料直接带隙跃迁发光.在1.5%张应变条件下,N型掺杂Ge的最大内量子效率可以达到74.6%,光增益可以与Ⅲ-V族材料相比拟.
Strained germanium materials with quasi-direct banding characteristics, and compatible with the standard silicon process, become one of the important candidate materials for the realization of silicon-based light-emitting devices.In this paper, based on the van de Walle deformation potential theory, calculated under the strain of semiconductor Ge material band structure And the distribution of carriers in the conduction band. By analyzing the competition between the radiation recombination of carrier direct band and indirect band-gap and the non-radiative recombination caused by Auger recombination and dislocation, the N-type tensile strain The results show that the tensile strain can effectively enhance the direct bandgap transition of Ge. The maximum internal quantum efficiency of N-doped Ge can be achieved under the strain of 1.5% 74.6%, optical gain can be compared with Ⅲ-V materials.