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从2英寸、3英寸、4英寸到如今的6英寸碳化硅单晶衬底,陈小龙团队花了10多年时间,在国内率先实现了碳化硅单晶衬底自主研发和产业化。不久前,中国科学院物理研究所研究员陈小龙研究组与北京天科合达蓝光半导体有限公司(以下简称天科合达)合作,解决了6英寸扩径技术和晶片加工技术,成功研制出了6英寸碳化硅单晶衬底。第三代半导体材料上世纪五六十年代,硅和锗构成了第一代半导体材料,主要应用于低压、低频、中功率晶体管以及光电探测器中。相比于锗半导体器件,硅材料制造的半
From 2 inches, 3 inches, 4 inches to today’s 6-inch silicon carbide single crystal substrate, Chen Xiaolong team spent more than 10 years, the first in China to achieve the independent research and development and industrialization of the silicon carbide single crystal substrate. Not long ago, Chen Xiaolong, a research fellow at the Institute of Physics, Chinese Academy of Sciences, and Beijing Tianke Heda Blu-ray Semiconductor Co., Ltd. (hereinafter referred to as Tianke Heda), solved the 6-inch expansion technology and wafer processing technology and successfully developed a 6-inch Silicon carbide single crystal substrate. Third-generation semiconductor materials In the 1950s and 1960s, silicon and germanium form the first generation of semiconductor materials, primarily used in low-voltage, low-frequency, mid-power transistors and photodetectors. Compared to germanium semiconductor devices, silicon materials are manufactured in half