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报道了在光辐射加热低压ＭＯＣＶＤ（ＲＴＰ／ＬＰ－ＭＯＣＶＤ）系统上，用Ｓｉ衬底成功生长了ＧａＮ外延薄膜。利用ＸＲＤ、拉曼光谱、霍耳测量及室温光致发光谱对外延薄膜进行了表征，初步的肖特基结制作表明了外延薄膜具有一定的器件质量。
It was reported that a GaN epitaxial thin film was successfully grown on a Si substrate using a photo-radiation heated low-pressure MOCVD (RTP / LP-MOCVD) system. The epitaxial films were characterized by XRD, Raman spectroscopy, Hall measurement and room temperature photoluminescence spectra. The preliminary fabrication of Schottky junction shows that the epitaxial films have a certain quality.