论文部分内容阅读
Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electronanalysis,X-ray double-crystal diffraction,selective etching and surface morphology analysis.The relation between crystalmismatch and interface property of such materials has been studied and the results could be understood in terms of the growth ki-netics at the heterojunction interface.The comparison of the characteristics of the electronic and optoelectronic devices fabricatedwith the wafers under different interface properties has been carried out.And it also has been demonstrated that the wafer surfacemorphology changes with the compositional gradation by certain relation.
Five kinds of InGaAsP / InP heterostructure materials grown with LPE have been measured by means of Auger electronanalysis, X-ray double-crystal diffraction, selective etching and surface morphology analysis. The relation between crystal mismatch and interface property of such materials has been studied and the results could be understood in terms of the growth ki-netics at the heterojunction interface. the comparison of the characteristics of the electronic and optoelectronic devices fabricated with the wafers under different interface properties has been carried out. And it it has has been demonstrated that the wafer surfacemorphology changes with the compositional gradation by certain relation.