硅器件和集成电路中广泛使用铝实现低阻的欧姆接触和内部互连线.长期的生产和实践证明铝金属化系统是成功的.小功率晶体管以及一般双极型数字电路,由于EB结较深,所以可以采用纯铝作为联线,在合金化时只要温度适当,不会烧坏EB结.但在中大规模电路及大功率管中,为了缩小芯片面积和提高性能,往往采用浅扩散和漂发射区工艺,而EB结短路成为主要困难,大部分短路现象是发生在铝硅合金化以后.为了解决这问题,我 Silicon devices and integrated circuits are widely used in aluminum to achieve low resistance Ohmic contacts and internal interconnects. Long-term production and practice proved that the aluminum metallization system is successful. Low-power transistors and general bipolar digital circuits, as compared with the EB Deep, so you can use pure aluminum as the line in the alloy as long as the temperature is appropriate, will not burn the EB junction.But in the large-scale circuits and high-power tube, in order to reduce the chip area and improve performance, often using shallow diffusion And bleaching shot zone process, and short-circuit the EB junction has become the main difficulty, most of the short circuit phenomenon occurs in Al-Si alloying.To solve this problem, I