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尽管CMOS器件在速度上和砷化镓器件在集成度上有固有的优势,但双极ECL仍是速度关键的 VLSI 所选用的技术。从主计算机数据通路和超高速缓冲存贮器到自动测试设备及光波传输系统,ECL 都能提供集成度、开关速度和驱动能力最佳组合的器件。过去,ECL 的主要限制是其高功耗,这限制了集成度且需要专门冷却。然而最近,工艺技术上的改进已使半导体厂家能够生产开关速度高、功耗低的器件。AT&T 公司已开发了这样一种技术,叫做 BEST-1(双极增强自对准技术),它是将不交叠的超自对准器件结构与外延自隔离工艺相结合。当最大触发频率为5GHz、额定电流增益为100时,BEST 在功耗低到2mw/门情况下
Although CMOS devices are inherently superior in speed and gallium arsenide device integration, bipolar ECLs are still the technology of choice for speed-critical VLSI. From host computer datapaths and caches to automated test equipment and lightwave transmission systems, ECL offers the right combination of integration, switching speed and drive capability. In the past, the main limitation of ECL was its high power consumption, which limited integration and required special cooling. Recently, however, improvements in process technology have enabled semiconductor manufacturers to produce devices with high switching speeds and low power consumption. AT & T has developed a technology called BEST-1 (bipolar enhancement self-alignment technology) that combines non-overlapping super-aligned device structures with epitaxial self-isolation processes. When the maximum trigger frequency of 5GHz, the rated current gain of 100, BEST low power consumption in the case of 2mw / door