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用深能级瞬态谱(DLTS)法测定了有意在硅中掺入的过渡金属的主要深能级位置,发现一个与铁有关的缺陷能级(E_(?)-0.31ev)。并观察了在硅单晶上外延生长多晶硅薄膜的吸杂效果,发现对锰和镉的吸杂效果很好。
The deep level transient state spectrum (DLTS) method was used to determine the major deep level sites of transition metals intentionally doped in silicon, and an iron-related defect level (E_ (?) - 0.31 eV) was found. The effect of gettering on the epitaxial growth of polycrystalline silicon film on silicon single crystal was observed. It was found that the gettering effect on manganese and cadmium was good.