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一、引言近十几年来,半导体集成电路(IC)已从中小规模跨入了大规模(LSI)时代,并正迅速向超大规模(VLSI)、超超大规模(ULSI)推进。目前已有1兆位VLSI产品。器件的迅速发展也就要求其衬底单晶硅在所有质量参数上和加工工艺技术上必须迅速提高,否则就要限制集成电路的发展。在单晶硅生长过程中,由于生长条件的制约,晶体的电阻率分布总是不均匀的,在电路工艺技术进入亚微米、微米级时代,这种衬底的不均匀性会直接影响IC
I. INTRODUCTION In recent decades, semiconductor integrated circuits (ICs) have entered the LSI era from small and medium-scale, and are rapidly moving toward VLSI and ULSI. Currently there is 1 megabit VLSI products. The rapid development of the device also requires that its substrate monocrystalline silicon must rapidly increase in all quality parameters and processing technologies, otherwise the development of integrated circuits should be limited. In the process of single crystal silicon growth, the resistivity distribution of the crystal is always uneven due to the growth conditions. In the submicron and micron times of the circuit technology, the substrate nonuniformity will directly affect the IC