论文部分内容阅读
研究了单晶硅片中维氏压痕诱生的位错在不同气氛下高温快速热处理中的滑移行为.研究表明:在快速热处理时,位错在压痕残余应力的弛豫过程中能发生快速滑移;当快速热处理温度高于1100℃时,在氮气氛下处理的硅片比在氩气氛下处理的硅片有更小的位错滑移距离.我们认为这是由于氮气氛下的高温快速热处理在压痕处注入的氮原子钉扎了位错,增加了位错的临界滑移应力,从而在相当程度上抑制了位错的滑移.可以推断氮气氛下的高温快速热处理注入的氮原子增强了硅片的机械强度.
The slip behavior of dislocations induced in the Vickers indentation in single-crystal silicon wafers under high temperature and rapid heat treatment under different atmospheres was studied. The results show that during the rapid thermal treatment, the dislocations can relax during the indentation residual stress relaxation With rapid slippage; the silicon wafers treated under a nitrogen atmosphere have a smaller dislocation slip distance than the silicon wafers processed under an argon atmosphere when the rapid thermal treatment temperature is above 1100 ° C. We think this is due to the nitrogen atmosphere Of the rapid heat treatment at the indentation implanted nitrogen atom pinning dislocations, increasing the critical slip stress of dislocation, which to a certain extent, inhibit the slip of dislocation can be concluded under a nitrogen atmosphere at high temperature rapid heat treatment The injected nitrogen atoms enhance the mechanical strength of the wafer.