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介绍了ＳＯＩＭＯＳＦＥＴ 二维数值模拟器的设计过程。耦合和非耦合相结合的迭代方法提高了收敛稳定性和计算效率。考虑了两种载流子的连续性方程及产生复合作用，精度较高。给出了利用该设计方法获得的ＳＯＩＭＯＳＦＥＴ二维体电势分布以及载流子浓度分布的三维输出图形。
The design process of SOIMOSFET two-dimensional numerical simulator is introduced. The iterative method combining coupling and uncoupling improves the convergence stability and computational efficiency. Considering the continuity equation of two kinds of carriers and producing compound effect, the accuracy is higher. The two-dimensional body potential distribution of SOIMOSFET and the three-dimensional output pattern of carrier concentration distribution obtained by this design method are given.