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在入射激光光斑半径远远大于材料热扩散长度的条件下,应用固体热传导理论,使用有限元方法建立了相关模型。对长脉冲(脉宽1 ms)强激光与半导体材料Si和Ge的热作用进行了分析,定量地描绘出了材料的温度分布,得到了不同能量激光辐照下靶材前、后表面中心点温度历史,以及不同能量激光辐照下的靶材后表面的温度分布情况。所得结果为高能量激光的应用提供了依据。
Under the conditions that the incident laser spot radius is much larger than the thermal diffusion length of the material, the solid heat conduction theory is applied and the relevant model is established by using the finite element method. The thermal effects of long pulse (pulse width 1 ms) intense laser and semiconductor materials Si and Ge were analyzed, the temperature distribution of the material was quantitatively drawn, and the center points of the front and the back of the target irradiated by different energy laser Temperature history, and the temperature distribution of the target surface under different energy laser irradiation. The results provide the basis for the application of high-energy laser.