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报道了在Ｓｉ基上用简便的真空反应法制备出ＧａＮ外延层．光致发光光谱测试结果表明不同的生长温度和退火工艺会对ＧａＮ外延层的发光特性产生影响，在１０５０℃下生长的ＧａＮ外延层的发光强度高于其他温度下生长的发光强度，退火可以使ＧａＮ外延层的发光强度增强．二次离子质谱（ＳＩＭＳ）测试结果表明外延层中Ｇａ和Ｎ分布均匀，在表面处Ｇａ发生了偏聚，同时外延层中还存在Ｓｉ，Ｏ等杂质，这使得外延层中背景电子浓度高达１７×１０１８／ｃｍ３．ＳＩＭＳ测试结果还表明，在外延生长前采用原位清洗可去除Ｓｉ衬底表面的Ｏ．
It has been reported that a GaN epitaxial layer is prepared on a Si substrate by a simple vacuum reaction method. The results of photoluminescence spectroscopy show that different growth temperature and annealing process will affect the luminescence properties of GaN epitaxial layer. The luminescence intensity of GaN epitaxial layer grown at 1050 ℃ is higher than the luminescence intensity grown at other temperatures. Annealing can make The luminescence intensity of GaN epitaxial layer is enhanced. SIMS results show that Ga and N are distributed uniformly in the epitaxial layer, segregation of Ga occurs at the surface and Si, O and other impurities exist in the epitaxial layer, which makes the concentration of background electrons in the epitaxial layer up to 1 7 × 1018 / cm3. SIMS test results also show that in situ cleaning before epitaxial growth can remove the surface of the Si substrate O.