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随着光刻胶厚度的不断增大,制作的光刻图形畸变愈发严重,这极大的影响了微结构器件的性能与应用。针对高深宽比柱状微结构在光刻胶厚度方向上畸变的特点,提出了双面曝光和亮衬线、灰阶掩模相结合的办法,利用遗传算法对失真影响最大的区域进行搜索,光刻胶内部各层的衍射光场分布作为评价函数,对光刻过程引起的畸变进行优化。仿真结果显示,优化后光刻胶各层面型质量得到极大的改善,特征尺寸和边墙角等参数与理论值吻合得更好。优化算法具有很好的灵活性,因此在用于更厚光刻胶、更复杂掩模图形的优化上,具有重要的指导意义。
As the thickness of the photoresist increases, the lithographic pattern distortion produced becomes more and more serious, which greatly affects the performance and application of the microstructured device. Aiming at the characteristics of the high aspect ratio columnar structure distorted in the thickness direction of the photoresist, a combination of double exposure, bright liners and grayscale masks is proposed. Genetic algorithm is used to search the area which has the most influence on the distortion. The light The distribution of the diffractive light field in the inner layers of the photoresist is used as an evaluation function to optimize the distortion caused by the lithography process. The simulation results show that the quality of each layer type of the optimized photoresist has been greatly improved, and the parameters such as the feature size and the sidewall angle are in good agreement with the theoretical values. The optimization algorithm has great flexibility and therefore has important guiding significance for the optimization of thicker photoresists and more complex mask patterns.