论文部分内容阅读
采用自主开发的3英寸(75mm)SiC外延技术和SiC MESFET的设计及工艺加工技术,成功地实现了S波段中长脉宽条件下(脉宽300μs,占空比10%),输出功率大于200W,功率增益大于11dB,功率附加效率大于30%的性能样管,脉冲顶降小于0.5dB,实现了大功率输出条件下的较高功率增益和功率附加效率及较小的脉冲顶降,初步显示了SiC功率器件的优势。器件设计采用多胞合成技术,为减小引线电感对功率增益的影响,采用了源引线双边接地技术;为提高器件的工作频率,采用了电子束写栅技术;为提高栅的可靠性,采用了加厚栅金属和国家授权的栅平坦化发明专利技术;同时采用了以金为主体的多层难熔金属化系统,提高了器件的抗电迁徙能力。
The self-developed 3-inch (75mm) SiC epitaxial technology and SiC MESFET design and process technology have successfully realized the S-band medium-long pulse width conditions (pulse width 300μs, duty cycle 10%), the output power is greater than 200W , The power gain is greater than 11dB, the additional efficiency of power efficiency of more than 30% of the performance of the sample tube, pulse drop less than 0.5dB, to achieve high power output under high power gain and power added efficiency and small pulse drop, preliminary display The advantages of SiC power devices. Device design using multi-cell synthesis technology, in order to reduce the lead inductance of the power gain, the use of the source lead bilateral ground technology; in order to improve the operating frequency of the device, the use of electron beam write gate technology; gate in order to improve reliability, the use of A thicker gate metal gate grid and patents granted by the state invention patents; also used to gold as the main multi-layer refractory metallization system to improve the device’s resistance to electromigration.