This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A + Mn centre with two holes weakly bound by a negatively charged 3d 5 (Mn) core of a local spin S = 5/2 in the framework of the effective mass approximation near the Γ critical point (k ～ 0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A + Mn are calculated within a hole concentration range from 1×10 16 cm 3 to 1×10 17 cm 3 , which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A 0 Mn centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A + Mn centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A + Mn centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A + Mn centre since a high frequency dielectric constant of ε∞ = 10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A + Mn centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors. This paper describes an nipin model heterostructure with a manganese (Mn) -doped p-type base region to check the stability of a charged manganese A + Mn center with two holes weakly bound by a negatively charged 3d 5 (Mn) core of a local spin S = 5/2 in the framework of the effective mass approximation near the Γ critical point (k ~ 0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged center A + Mn are calculated within a hole concentration range from 1 × 10 16 cm 3 to 1 × 10 17 cm 3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the turns A of the neutral A 0 Mn center is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A + Mn center varies from 9.27 meV to 4.57 meV. We propose that the presence of the A + Mn center can be examined by measuring the photolumines cence from recombination of electrons in the conduction band with the bound holes in the A + Mn center since a high frequency dielectric constant of ε∞ = 10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A + Mn center makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.