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介绍了GaAs异质结双极型晶体管(HBT)的Kink效应及其对宽带匹配的影响,并根据负反馈原理,提出了一种新型的HBT复合管结构。通过对该结构进行小信号分析和计算机软件仿真,该复合晶体管在整个测试频段内输出阻抗接近于一个简单的RC串联电路,并且输出电阻在很宽的频率范围内保持稳定。采用2μm InGaP/GaAs HBT半导体工艺技术流片测试,结果表明,在0.1~20 GHz(接近该HBT的截止频率)的频率范围内所提出的新型HBT复合管抑制了Kink效应并与理论分析结果及计算机仿真结果相吻合。采用该复合管作为宽带放大器的有源器件可以在很大程度上简化匹配电路的设计并且不会显著增加芯片面积和功耗。
The Kink effect of GaAs heterojunction bipolar transistor (HBT) and its effect on broadband matching are introduced. According to the principle of negative feedback, a novel HBT composite tube structure is proposed. Through the small signal analysis and computer software simulation of the structure, the output impedance of the composite transistor is close to a simple RC series circuit in the whole test frequency band, and the output resistance is stable over a wide frequency range. Using 2μm InGaP / GaAs HBT semiconductor technology, the results show that the new HBT composite tube in the frequency range of 0.1 ~ 20 GHz (close to the cutoff frequency of HBT) suppresses the Kink effect and correlates well with the theoretical analysis and Computer simulation results are consistent. Using this composite tube as an active device for a wideband amplifier can greatly simplify the design of the matching circuit without significantly increasing the chip area and power consumption.