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1987年,8月5日.在我国发射的又一颗返回式科学实验卫星上,成功地进行了一次熔体生长砷化镓单晶的科学试验.这一开创性半导体材料科学研究的倡导者和组织领导者,就是我国半导体材料物理学家林兰英教授.研制我国第一根锗单晶、硅单晶1957年春节过后,刚从美国归来的林兰英,在“向科学进军”这股大潮的席卷下,开始了祖国半导体材料科学事业的征程.这年4月,她到中科院应用物理所
1987, August 5. A scientific experiment on the melt growth of gallium arsenide single crystals was successfully carried out on another returning scientific experimental satellite launched in our country, an advocate of scientific research on groundbreaking semiconductor materials And organizational leader, is China’s semiconductor materials physicist Professor Lin Lanying.Development of China’s first germanium single crystal, silicon single crystal After the Spring Festival in 1957, just returned from the United States Lin Lan-ying, “to science” swept the tide of this wave Under the start of the motherland’s semiconductor materials science journey, in April this year, she went to the Institute of Applied Physics