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采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950℃下流动的氨气中进行氨化反应制备GaN纳米棒.应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.观察发现纳米棒表面光滑.并讨论了GaN纳米棒的生长机制.
Ga 2 O 3 / Co thin films were prepared on Si substrate by magnetron sputtering firstly and then ammoniated by ammonia flowing at 950 ℃ to prepare GaN nanorods. X-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy The results show that the GaN single crystal nanorods with hexagonal wurtzite structure are obtained by this method.It is found that the surface of the nanorods is smooth.The effects of GaN nanorods Growth mechanism.